Floating Gate Memory‐based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics. Issue 2 (13th August 2014)

• Record Type: Journal Article
• Authors: Wang, Jingli; Zou, Xuming; Xiao, Xiangheng; Xu, Lei; Wang, Chunlan; Jiang, Changzhong; Ho, Johnny C.; Wang, Ti; Li, Jinchai; Liao, Lei
• Is Part Of: Small. Volume 11:Issue 2(2015)
• Page Start: 208
• Page End: 213
• Publication Date: 2014-08-13
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201401872
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="smll201401872-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Charge trapping layers</bold> are formed from different metallic nanocrystals in MoS₂‐based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10⁵ and a long retention time of 10 years. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh31q0r8nn" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>