Comprehensive study of the radiation effects on the LDMOS transistors. (December 2022)

• Record Type: Journal Article
• Authors: Lei, Zeyu; Zhang, Chenchen; Wu, Ming; Zou, Xuming; Yan, Junzheng; Chen, Zhuojun
• Is Part Of: Microelectronics and reliability. Volume 139(2022)
• Publication Date: 2022-12
• Subjects: TCAD -- Total ionizing dose (TID) -- Single-event effect (SEE) -- Transient dose rate effects (TDRE) -- LDMOS; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114793
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The reliability of power devices is attracting more and more attention, especially in the extreme radiation environment. The laterally diffused metal–oxide–semiconductor (LDMOS) has been widely used in high voltage integrated circuits. In this paper, the radiation effects of LDMOS transistors are extensively investigated through three-dimensional (3D) TCAD simulations, including Total-Ionizing Dose (TID), Single-Event Effect (SEE) and Transient Dose Rate Effect (TDRE). Firstly, the mechanism of TID effect on the LDMOS is revealed in consideration of temperature variations. Secondly, the single-event effect of the LDMOS is studied with different incident positions, linear energy transfer (LET) values, incident lengths, incident angles, bias conditions and temperatures. Besides, the combined effect of total-ionizing dose and single-event burnout is characterized. Finally, transient response of the LDMOS under transient γ radiation is also studied comprehensively. Therefore, it gives an insight into the physical mechanisms and response characteristics of complex radiation effects, which can provide guidance for radiation-hardened by design and application of the LDMOS devices. Highlights: The mechanism of TID effect on the LDMOS is revealed in consideration of temperature variations. The most sensitive region to SEB of the LDMOS locates at the boundary between the channel and drift region. Except for the off bias, the ON bias and subthreshold bias are also sensitive to SEB effect. The physical mechanisms of the combined effects of SEB and TID are revealed. Transient response of the LDMOS under transient gamma radiation is studied.