1. 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Issue 13 (1st June 2018) Authors: Hao, Ronghui; Wu, Dongdong; Fu, Kai; Song, Liang; Chen, Fu; Zhao, Jie; Du, Zhongkai; Zhang, Bingliang; Wang, Qilong; Yu, Guohao; Cheng, Kai; Cai, Yong; Zhang, Xinping; Zhang, Baoshun Journal: Electronics letters Issue: Volume 54:Issue 13(2018) Page Start: 848 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Issue 18 (1st August 2014) Authors: Liu, Shuang; Yu, Guohao; Fu, Kai; Tan, Shuxin; Zhang, Zhili; Zeng, Chunhong; Hou, Keyu; Huang, Wei; Cai, Yong; Zhang, Baoshun; Yuan, Jinshe Journal: Electronics letters Issue: Volume 50:Issue 18(2014) Page Start: 1322 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si3N4 as gate insulator. Issue 15 (8th July 2015) Authors: Zhang, Zhili; Yu, Guohao; Zhang, Xiaodong; Tan, Shuxin; Wu, Dongdong; Fu, Kai; Huang, Wei; Cai, Yong; Zhang, Baoshun Journal: Electronics letters Issue: Volume 51:Issue 15(2015) Page Start: 1201 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Issue 3 (1st January 2013) Authors: Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun Journal: Electronics letters Issue: Volume 49:Issue 3(2013) Page Start: 221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Biaxial film bulk acoustic resonator magnetic sensor based on the Fe80Ga20 anisotropic ΔE effect. (31st December 2021) Authors: Yun, Xiaofan; Lin, Wenkui; Hu, Rui; Wang, Xiaoyi; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun Journal: Journal of physics Issue: Volume 55:Number 13(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity. Issue 7 (16th January 2019) Authors: He, Tao; Zhang, Xiaodong; Ding, Xiaoyu; Sun, Chi; Zhao, Yukun; Yu, Qiang; Ning, Jiqiang; Wang, Rongxin; Yu, Guohao; Lu, Shulong; Zhang, Kai; Zhang, Xinping; Zhang, Baoshun Journal: Advanced optical materials Issue: Volume 7:Issue 7(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD. (17th May 2021) Authors: Ma, Yongjian; Zhang, Xiaodong; Li, Junshuai; Cao, Xu; He, Tao; Zhang, Li; Tang, Wenbo; Xu, Kun; Fan, Yaming; Cai, Yong; Fu, Houqiang; Zhang, Baoshun Journal: Journal of physics Issue: Volume 54:Number 30(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector. (1st March 2021) Authors: Cao, Xu; Xing, Yanhui; Han, Jun; Li, Junshuai; He, Tao; Zhang, Xiaodong; Zhao, Jiahao; Zhang, Baoshun Journal: Materials science in semiconductor processing Issue: Volume 123(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Demonstration of wafer‐level light emitting diode with very high output power. Issue 25 (1st December 2014) Authors: Zhang, Yibin; Xu, Fei; Zhao, Desheng; Huang, Hongjuan; Wang, Wei; Xu, Jianwei; Cai, Yong; Shi, Guangyi; Lu, Guojun; Miao, Zhenlin; Qi, Yundong; Zhang, Baoshun Journal: Electronics letters Issue: Volume 50:Issue 25(2014) Page Start: 1970 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Demonstration of wafer‐level white light emitting diode with 92, 000 lm luminous flux. Issue 8 (22nd February 2017) Authors: Zhang, Yibin; Xu, Jianwei; Zhao, Desheng; Huang, Hongjuan; Ding, Mingdi; Miao, Zhenlin; Wang, Yanming; He, Peng; Zhang, Baoshun; Cai, Yong Journal: Physica status solidi Issue: Volume 14:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗