12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Issue 18 (1st August 2014)

• Record Type: Journal Article
• Authors: Liu, Shuang; Yu, Guohao; Fu, Kai; Tan, Shuxin; Zhang, Zhili; Zeng, Chunhong; Hou, Keyu; Huang, Wei; Cai, Yong; Zhang, Baoshun; Yuan, Jinshe
• Is Part Of: Electronics letters. Volume 50:Issue 18(2014)
• Page Start: 1322
• Page End: 1324
• Publication Date: 2014-08-01
• Subjects: alumina -- gallium compounds -- silicon -- elemental semiconductors -- wide band gap semiconductors -- III‐V semiconductors -- high electron mobility transistors -- dielectric materials -- atomic layer deposition; MOS‐HEMT -- low specific on‐resistance -- minimal threshold hysteresis -- silicon substrate -- high‐electron mobility transistors -- metal‐oxide semiconductor -- gate dielectric films -- atomic layer deposition -- maximum saturate drain current -- power switching applications -- size 8 nm -- current 12.5 A -- voltage 0.05 V -- AlGaN‐GaN‐Si -- Al2O3; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2020
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An AlGaN/GaN metal–oxide semiconductor (MOS) high‐electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2 O3 gate dielectric films grown using atomic layer deposition. The MOS‐HEMT shows a low specific on‐resistance of 0.57 Ω·mm 2, a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on‐resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS‐HEMT is very suitable for power switching applications.