5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Issue 3 (1st January 2013)

• Record Type: Journal Article
• Authors: Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun
• Is Part Of: Electronics letters. Volume 49:Issue 3(2013)
• Page Start: 221
• Page End: 222
• Publication Date: 2013-01-01
• Subjects: AlGaN‐GaN -- Si -- Al2O3; current -- size -- voltage -- voltage -- voltage; alumina -- aluminium compounds -- atomic layer deposition -- dielectric materials -- electromagnetic interference -- elemental semiconductors -- field effect transistor switches -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- MOSFET -- power semiconductor switches -- silicon -- wide band gap semiconductors; MOS‐HEMT -- high threshold voltage -- metal‐oxide‐semiconductor high electron mobility transistors -- fluorine‐based treatment technique -- gate dielectric -- atomic layer deposition -- large input voltage swing -- electromagnetic interference immunity -- MOS‐HEMT power switches -- current 5.3 A -- voltage 400 V -- size 20 nm -- voltage 3.5 V -- voltage 402 V -- AlGaN‐GaN -- Si -- Al2O3; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3153
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Normally‐off AlGaN/GaN metal‐oxide‐semiconductor high electron mobility transistors (MOS‐HEMTs) on Si substrate were fabricated with the fluorine‐based treatment technique. By employing a 20nm‐thick Al2 O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS‐HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off‐state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS‐HEMT power switches.