Demonstration of wafer‐level light emitting diode with very high output power. Issue 25 (1st December 2014)

• Record Type: Journal Article
• Authors: Zhang, Yibin; Xu, Fei; Zhao, Desheng; Huang, Hongjuan; Wang, Wei; Xu, Jianwei; Cai, Yong; Shi, Guangyi; Lu, Guojun; Miao, Zhenlin; Qi, Yundong; Zhang, Baoshun
• Is Part Of: Electronics letters. Volume 50:Issue 25(2014)
• Page Start: 1970
• Page End: 1972
• Publication Date: 2014-12-01
• Subjects: light emitting diodes -- electric resistance; current 4 A -- power 157 W -- driving current -- external quantum efficiency -- light output power -- resistance matching technique -- high‐voltage network design -- wafer‐level light emitting diode; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.3657
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A.