1. 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Issue 13 (1st June 2018) Authors: Hao, Ronghui; Wu, Dongdong; Fu, Kai; Song, Liang; Chen, Fu; Zhao, Jie; Du, Zhongkai; Zhang, Bingliang; Wang, Qilong; Yu, Guohao; Cheng, Kai; Cai, Yong; Zhang, Xinping; Zhang, Baoshun Journal: Electronics letters Issue: Volume 54:Issue 13(2018) Page Start: 848 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Issue 18 (1st August 2014) Authors: Liu, Shuang; Yu, Guohao; Fu, Kai; Tan, Shuxin; Zhang, Zhili; Zeng, Chunhong; Hou, Keyu; Huang, Wei; Cai, Yong; Zhang, Baoshun; Yuan, Jinshe Journal: Electronics letters Issue: Volume 50:Issue 18(2014) Page Start: 1322 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si3N4 as gate insulator. Issue 15 (8th July 2015) Authors: Zhang, Zhili; Yu, Guohao; Zhang, Xiaodong; Tan, Shuxin; Wu, Dongdong; Fu, Kai; Huang, Wei; Cai, Yong; Zhang, Baoshun Journal: Electronics letters Issue: Volume 51:Issue 15(2015) Page Start: 1201 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Issue 3 (1st January 2013) Authors: Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun Journal: Electronics letters Issue: Volume 49:Issue 3(2013) Page Start: 221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity. Issue 7 (16th January 2019) Authors: He, Tao; Zhang, Xiaodong; Ding, Xiaoyu; Sun, Chi; Zhao, Yukun; Yu, Qiang; Ning, Jiqiang; Wang, Rongxin; Yu, Guohao; Lu, Shulong; Zhang, Kai; Zhang, Xinping; Zhang, Baoshun Journal: Advanced optical materials Issue: Volume 7:Issue 7(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability *Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767). (July 2017) Authors: Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun Journal: Journal of semiconductors Issue: Volume 38:Number 7(2017:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs. (1st July 2022) Authors: Tang, Wenxin; Zhou, Jiaan; Yu, Guohao; Wei, Xing; Tang, Wenbo; Zhang, Li; Liu, Weining; Chen, Tiwei; Yu, Zicheng; Wang, Heng; Zhang, Xiaodong; Lin, Wenkui; Huang, Zengli; Huang, Rong; Cai, Yong; Zhang, Baoshun Journal: Applied physics express Issue: Volume 15:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid. (25th July 2016) Authors: Zhang, Zhili; Qin, Shuangjiao; Fu, Kai; Yu, Guohao; Li, Weiyi; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Li, Shuiming; Hao, Ronghui; Fan, Yaming; Sun, Qian; Pan, Gebo; Cai, Yong; Zhang, Baoshun Journal: Applied physics express Issue: Volume 9:Number 8(2016:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation. (1st August 2023) Authors: Ding, Xiaoyu; Song, Liang; Yu, Guohao; Cai, Yong; Sun, Yuhua; Zhang, Bingliang; Du, Zhongkai; Zeng, Zhongming; Zhang, Xinping; Zhang, Baoshun Journal: Materials science in semiconductor processing Issue: Volume 162(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP. (April 2022) Authors: Yu, Zicheng; Zhang, Li; Yu, Guohao; Deng, Xuguang; Jiang, Chunyu; Tang, Wenxin; Yin, Haotian; Liu, Weining; Chen, Zhang; Zhang, Baoshun Journal: Materials science in semiconductor processing Issue: Volume 141(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗