Author/Creator: Raman, Ashish - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Raman, Ashish

1. A charge-based capacitance model for double-gate hetero-gate-dielectric tunnel FET. (February 2021)

Authors:: Kaur, Sarabjeet; Raman, Ashish; Sarin, Rakesh Kumar
Journal:: Superlattices and microstructures
Issue:: Volume 150(2021)
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Record Type:: Journal Article
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2. A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity. (November 2017)

Authors:: Singh, Navaneet Kumar; Raman, Ashish; Singh, Sarabdeep; Kumar, Naveen
Journal:: Superlattices and microstructures
Issue:: Volume 111(2017)
Page Start:: 518
Record Type:: Journal Article
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3. An explicit surface potential, capacitance and drain current model for double-gate TFET. (April 2020)

Authors:: Kaur, Sarabjeet; Raman, Ashish; Sarin, Rakesh Kumar
Journal:: Superlattices and microstructures
Issue:: Volume 140(2020)
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Record Type:: Journal Article
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4. Charge-Plasma Based Cylindrical Nanowire FET for Low-Noise and High Sensing. (17th February 2021)

Authors:: Singh, Sarabdeep; Raman, Ashish
Journal:: ECS journal of solid state science and technology
Issue:: Volume 10:Number 2(2021)
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Record Type:: Journal Article
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5. Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing. (January 2019)

Authors:: Jayaswal, Neha; Raman, Ashish; Kumar, Naveen; Singh, Sarabdeep
Journal:: Superlattices and microstructures
Issue:: Volume 125(2019)
Page Start:: 256
Record Type:: Journal Article
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6. Design and analysis of RF-low power and low-phase noise CMOS ring oscillator for fully integrated RF communication systems technologies. (2016)

Authors:: Raman, Ashish; Sarin, Rakesh Kumar
Journal:: International journal of information and communication technology
Issue:: Volume 8:Number 1(2016)
Page Start:: 79
Record Type:: Journal Article
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7. Design and optimization analysis of dual material gate on DG-IMOS. (December 2017)

Authors:: Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen
Journal:: Journal of semiconductors
Issue:: Volume 38:Number 12(2017:Dec.)
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Record Type:: Journal Article
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8. Effects of gate width variation on the performance of Normally‐OFF dual‐recessed gate MIS AlGaN/GaN HEMT. (28th September 2021)

Authors:: Ranjan, Ravi; Kashyap, Nitesh; Raman, Ashish
Journal:: International journal of numerical modelling
Issue:: Volume 35:Number 2(2022)
Page Start:: n/a
Record Type:: Journal Article
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9. Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor. (1st September 2022)

Authors:: Sachdeva, Rohit; Bhushan, Aditya; Bajaj, Aayush; Gupta, Maneesha; Kumar, Prateek; Raman, Ashish; Ranjan, Ravi; Kumar, Naveen
Journal:: Engineering research express
Issue:: Volume 4:Number 3(2022)
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Record Type:: Journal Article
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10. Nanoscale semiconductors : materials, devices and circuits /: materials, devices and circuits. (2022)

Editors:: Raj, Balwinder, 1980-; Raman, Ashish
Record Type:: Book
Extent:: 1 online resource
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