Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing. (January 2019)

• Record Type: Journal Article
• Authors: Jayaswal, Neha; Raman, Ashish; Kumar, Naveen; Singh, Sarabdeep
• Is Part Of: Superlattices and microstructures. Volume 125(2019)
• Page Start: 256
• Page End: 270
• Publication Date: 2019-01
• Subjects: Vertical nanowire FET (VNWFET) -- Ammonia gas sensor -- Indium gallium zinc oxide (IGZO) -- Electrostatic-Charge plasma (E-CP); Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.11.009
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, Dopingless Gate All Around (GAA) Vertical Nanowire Field Effect Transistor (VNWFET) is designed with artificial material Indium Gallium Zinc Oxide (IGZO) as a channel material. IGZO channel has high electron mobility compared to more traditional amorphous semiconductors. In VNWFETs, since the channel length (Lch ) is characterized vertically, it can be relaxed without area penalty on-chip, which in turn also allows some relaxation in the nanowire diameter while keeping optimum short-channel-effects control. Electrostatic-Charge Plasma technique is used to form a source-drain region on an intrinsic body of IGZO material. At the source side, the N + region is formed by selecting the appropriate work function of the metal electrode, and at the drain side, the N + region is formed by giving biasing to the metal electrode. N + channel dopingless VNWFET with the catalytic metal gate is proposed for ammonia gas sensing. Cobalt, Molybdenum, and Ruthenium are used as a gate electrode in ammonia gas detection due to their high reactivity towards ammonia. Also, we have compared their ON and OFF sensitivity of the proposed device toward the gas adsorption. Due to the presence of gas on the gate, the metal work function of gate metal changes which varies the OFF-current (IOFF ), ON-current (ION ) and Threshold voltage (Vth ) as these are considered as sensitivity parameters for sensing the ammonia gas molecules. The dimensional parameters (radius, and length) and dielectric materials are varied to check the change in device sensitivities. Results show that as the work function varies increases 50, 100, 150, 200 meV and 250 meV for catalytic metal at the gate, the sensitivity is increased. Highlights: Designing of novel integration of Electrostatic-Charge plasma technique to realize Cuboidal Nanowire FET. Use of artificial material for structure design, i.e., Indium Gallium Zinc Oxide (IGZO) to enhance ON current and device stability at a higher temperature. Application of the proposed device for catalytic gate based ammonia gas sensing. Comparison analysis of proposed device with different catalytic gate metal to optimize the sensing parameters.