Effects of gate width variation on the performance of Normally‐OFF dual‐recessed gate MIS AlGaN/GaN HEMT. (28th September 2021)

• Record Type: Journal Article
• Authors: Ranjan, Ravi; Kashyap, Nitesh; Raman, Ashish
• Is Part Of: International journal of numerical modelling. Volume 35:Number 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-28
• Subjects: dopingless -- dual gate -- gallium nitride -- high electron mobility transistor -- metal insulator semiconductor -- recess gate; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2960
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: Discovery of wideband gap semiconductor materials has boosted the field of power electronics. Fabrication of HEMT has overcome the drawback of lower mobility and ON‐state current of wide bandgap materials. However, due to lower ON‐state current earlier proposed devices suffer from poor ON‐state resistance; hence, in this work dual gate technique has been proposed. To further switch the device characteristics from Normally‐ON to Normally‐OFF state, recessed gate technique is used. Device physics, analog parameters of Normally‐OFF dual‐recessed gate metal insulator semiconductor AlGaN/GaN HEMT (DRG‐MIS‐HEMT) are analyzed and compared with conventional DG‐MIS‐HEMT. To solidify the analysis, width of recessed gate has been varied from 2 nm to 28 nm. At recessed gate width (=28 nm), proposed device resulted R ON = 1.98 Ω‐cm 2, threshold voltage 1.25 V, I DS of 1100 mA/mm, I ON / I OFF = 10 14 and f t = 10 GHz. Proposed device also resulted in improved linearity characteristics over single gate structure. In future, the proposed device can be used for RF applications.