A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity. (November 2017)

• Record Type: Journal Article
• Authors: Singh, Navaneet Kumar; Raman, Ashish; Singh, Sarabdeep; Kumar, Naveen
• Is Part Of: Superlattices and microstructures. Volume 111(2017)
• Page Start: 518
• Page End: 528
• Publication Date: 2017-11
• Subjects: Cylindrical gate nanowire FET (CGNWFET) -- Indium gallium arsenide (In1-xGaxAs) -- Gas sensor -- Subthreshold slope (SS); Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.07.001
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, Cylindrical Gate Nanowire FET (CGNWFET) is designed with highly doped III-V group compound Indium-gallium-arsenide (In1-x Gax As) as the channel material. Based on the proposed structure, the hydrogen (H2 ) and oxygen (O2 ) gas sensors are designed for enhanced sensitivity. Palladium (Pd) is used as a gate electrode in H2 gas detection whereas silver (Ag) in O2 gas detection because of their sensitivity towards that gas. As the metal work function at gate changes with the presence of gas on it, there is a change in Ioff, Ion and threshold voltage (Vth ) which can be taken as sensitivity parameters for sensing the gas molecules. The dimensional parameters varied to check the sensitivities are radius and length of the device. When the sensitivity of proposed In1-x Gax As CGNWFET is compared with conventional Silicon (Si) CGNWFET, In1-x Gax As CGNWFET shows enhanced sensitivity. Result shows that as work function varies as 50, 100, 150 and 200 meV for Pd/Ag-metal at gate, the sensitivity enhancement with In1-x Gax As CGNWFET based H2 /O2 gas sensors are 3.27%, 9.11%, 17.02%, 30.18% and 2.59%, 5.78%, 7.11%, 12.17% respectively. Different dielectric materials at the gate are also analyzed. Higher sensitivity is observed for higher dielectric value. Thus, In1-x Gax As proves to be a strong candidate for designing CGNWFET based sensors for enhanced sensitivity. Highlights: Simulation of Cylindrical Gate Nanowire FET. Use of highly doped III-V group compound Indium-gallium-arsenide (In1-x Gax As) as the channel material. Designing of In1-x Gax As based Cylindrical Gate Nanowire FET Hydrogen and oxygen sensor.