1. (Invited) Electrical Activity of Extended Defects in III-V Semiconductors. (3rd July 2019) Authors: Simoen, Eddy Roger; Hsu, P.-C.; Mols, Yves; Kunert, Bernardette; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics. (31st March 2015) Authors: Thean, Aaron; Collaert, Nadine; Radu, Iuliana P.; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Verhulst, A.; Veloso, Anabela; Yakimets, D.; Bao, T. Huynh; Chiappe, Danielle; Vaysset, A.; Zografos, O.; Caymax, Matty; Huygheba... Journal: ECS transactions Issue: Volume 66:Number 4(2015) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices. (26th April 2016) Authors: Merckling, Clement; Liu, Ziyang; Hsu, Mark; Hasan, Samiul; Jiang, Sijia; El Kazzi, Salim; Boccardi, Guillaume; Waldron, Niamh; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Van Campenhout, Joris; Collaert, Nadine; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron Journal: ECS transactions Issue: Volume 72:Number 2(2016) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications. (31st March 2015) Authors: Merckling, Clement; Jiang, Sijia; Liu, Ziyang; Waldron, Niamh; Boccardi, G; Rooyackers, R; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Collaert, Nadine; Van Campenhout, Joris; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron Journal: ECS transactions Issue: Volume 66:Number 4(2015) Page Start: 107 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials. (14th September 2015) Authors: Simoen, Eddy; Eneman, Geert; Hikavyy, Andriy Yakovitch; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Schulze, Andreas; Caymax, Matty; Langer, Robert; Barla, Kathy; Claeys, Cor Journal: ECS transactions Issue: Volume 69:Number 10(2015) Page Start: 119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. (Invited) Vertical Nanowire FET Integration and Device Aspects. (4th May 2016) Authors: Veloso, Anabela; Altamirano-Sánchez, Efraín; Brus, Stephan; Chan, B. T.; Cupak, Miroslav; Dehan, Morin; Delvaux, Christie; Devriendt, Katia; Eneman, Geert; Ercken, Monique; Huynh-Bao, Trong; Ivanov, Tsvetan; Matagne, Philippe; Merckling, Clement; Paraschiv, Vasile; Ramesh, Siva; Rosseel, Erik; Ry... Journal: ECS transactions Issue: Volume 72:Number 4(2016) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers. (16th May 2017) Authors: Hsu, Min-Hsiang Mark; Van Thourhout, Dries; Pantouvaki, Marianna; Meersschaut, Johan; Conard, Thierry; Richard, Olivier; Bender, Hugo; Favia, Paola; Vila, Maria; Cid, Rosalia; Rubio-Zuazo, Juan; Castro, German R.; Van Campenhout, Joris; Absil, Philippe; Merckling, Clement Journal: Applied physics express Issue: Volume 10:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Editorial. Issue 8 (23rd April 2019) Authors: Modreanu, Mircea; Cornet, Charles; Durand, Olivier; Fujiwara, Hiroyuki; Jellison, Gerald E.; Bell, Gavin; Merckling, Clement Other Names: Modreanu Mircea guestEditor.; Cornet Charles guestEditor.; Durand Olivier guestEditor.; Fujiwara Hiroyuki guestEditor.; Jellison Gerald E. guestEditor.; Bell Gavin guestEditor.; Merckling Clement guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 8(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling. (March 2021) Authors: Mortelmans, Wouter; De Gendt, Stefan; Heyns, Marc; Merckling, Clement Journal: Applied materials today Issue: Volume 22(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface. (21st February 2018) Authors: Matsui, Takayuki; Li, Yi; Hsu, Min‐Hsiang Mark; Merckling, Clement; Oulton, Rupert F.; Cohen, Lesley F.; Maier, Stefan A. Journal: Advanced functional materials Issue: Volume 28:Number 17(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗