(Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices. (26th April 2016)

• Record Type: Journal Article
• Authors: Merckling, Clement; Liu, Ziyang; Hsu, Mark; Hasan, Samiul; Jiang, Sijia; El Kazzi, Salim; Boccardi, Guillaume; Waldron, Niamh; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Van Campenhout, Joris; Collaert, Nadine; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron
• Is Part Of: ECS transactions. Volume 72:Number 2(2016)
• Page Start: 59
• Page End: 69
• Publication Date: 2016-04-26
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07202.0059ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.