(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics. (31st March 2015)

• Record Type: Journal Article
• Authors: Thean, Aaron; Collaert, Nadine; Radu, Iuliana P.; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Verhulst, A.; Veloso, Anabela; Yakimets, D.; Bao, T. Huynh; Chiappe, Danielle; Vaysset, A.; Zografos, O.; Caymax, Matty; Huyghebaert, C; Barla, Kathy; Steegen, A.
• Is Part Of: ECS transactions. Volume 66:Number 4(2015)
• Page Start: 3
• Page End: 14
• Publication Date: 2015-03-31
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06604.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.