(Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications. (31st March 2015)

• Record Type: Journal Article
• Authors: Merckling, Clement; Jiang, Sijia; Liu, Ziyang; Waldron, Niamh; Boccardi, G; Rooyackers, R; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Collaert, Nadine; Van Campenhout, Joris; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron
• Is Part Of: ECS transactions. Volume 66:Number 4(2015)
• Page Start: 107
• Page End: 116
• Publication Date: 2015-03-31
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06604.0107ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This study relates to the selective area growth (SAG) of III-V semiconductors on Silicon substrates. Both approaches, growth in trenches and NWs bottom-up growth, are considered and discussed. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width below 20 nm. First GaAs NWs from production MOVPE tool are also shown in a second part. Finally we conclude with the different applications using III-V semiconductors successfully integrated on Silicon substrates.