1. 2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020). (9th December 2020) Authors: Tang, Jian; Wang, Qinqin; Wei, Zheng; Shen, Cheng; Lu, Xiaobo; Wang, Shuopei; Zhao, Yanchong; Liu, Jieying; Li, Na; Chu, Yanbang; Tian, Jinpeng; Wu, Fanfan; Yang, Wei; He, Congli; Yang, Rong; Shi, Dongxia; Watanabe, Kenji; Taniguchi, Takashi; Zhang, Guangyu Journal: Advanced Electronic Materials Issue: Volume 6:Number 12(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A General Route Towards Defect and Pore Engineering in Graphene. Issue 11 (7th March 2014) Authors: Xie, Guibai; Yang, Rong; Chen, Peng; Zhang, Jing; Tian, Xuezeng; Wu, Shuang; Zhao, Jing; Cheng, Meng; Yang, Wei; Wang, Duoming; He, Congli; Bai, Xuedong; Shi, Dongxia; Zhang, Guangyu Journal: Small Issue: Volume 10:Issue 11(2014:Jun.) Page Start: 2280 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing. (24th March 2021) Authors: Tang, Jian; He, Congli; Tang, Jianshi; Yue, Kun; Zhang, Qingtian; Liu, Yizhou; Wang, Qinqin; Wang, Shuopei; Li, Na; Shen, Cheng; Zhao, Yanchong; Liu, Jieying; Yuan, Jiahao; Wei, Zheng; Li, Jiawei; Watanabe, Kenji; Taniguchi, Takashi; Shang, Dashan; Wang, Shouguo; Yang, Wei Journal: Advanced functional materials Issue: Volume 31:Number 27(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021). (2nd July 2021) Authors: Tang, Jian; He, Congli; Tang, Jianshi; Yue, Kun; Zhang, Qingtian; Liu, Yizhou; Wang, Qinqin; Wang, Shuopei; Li, Na; Shen, Cheng; Zhao, Yanchong; Liu, Jieying; Yuan, Jiahao; Wei, Zheng; Li, Jiawei; Watanabe, Kenji; Taniguchi, Takashi; Shang, Dashan; Wang, Shouguo; Yang, Wei Journal: Advanced functional materials Issue: Volume 31:Number 27(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2. Issue 17 (16th March 2020) Authors: Xu, Hongjun; Wei, Jinwu; Zhou, Hengan; Feng, Jiafeng; Xu, Teng; Du, Haifeng; He, Congli; Huang, Yuan; Zhang, Junwei; Liu, Yizhou; Wu, Han‐Chun; Guo, Chenyang; Wang, Xiao; Guang, Yao; Wei, Hongxiang; Peng, Yong; Jiang, Wanjun; Yu, Guoqiang; Han, Xiufeng Journal: Advanced materials Issue: Volume 32:Issue 17(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022). (7th September 2022) Authors: Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu Journal: Advanced Electronic Materials Issue: Volume 8:Number 9(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities. (15th May 2022) Authors: Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu Journal: Advanced Electronic Materials Issue: Volume 8:Number 9(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS2 Monolayer (Small Methods 6/2021). Issue 6 (10th June 2021) Authors: Wei, Zheng; Tang, Jian; Li, Xuanyi; Chi, Zhen; Wang, Yu; Wang, Qinqin; Han, Bo; Li, Na; Huang, Biying; Li, Jiawei; Yu, Hua; Yuan, Jiahao; Chen, Hailong; Sun, Jiatao; Chen, Lan; Wu, Kehui; Gao, Peng; He, Congli; Yang, Wei; Shi, Dongxia Journal: Small methods Issue: Volume 5:Issue 6(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Nanographene charge trapping memory with a large memory window. (22nd October 2015) Authors: Meng, Jianling; Yang, Rong; Zhao, Jing; He, Congli; Wang, Guole; Shi, Dongxia; Zhang, Guangyu Journal: Nanotechnology Issue: Volume 26:Number 45(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. New Floating Gate Memory with Excellent Retention Characteristics. (18th January 2019) Authors: Wang, Shuopei; He, Congli; Tang, Jian; Lu, Xiaobo; Shen, Cheng; Yu, Hua; Du, Luojun; Li, Jiafang; Yang, Rong; Shi, Dongxia; Zhang, Guangyu Journal: Advanced Electronic Materials Issue: Volume 5:Number 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗