Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities. (15th May 2022)

• Record Type: Journal Article
• Authors: Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 9(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-15
• Subjects: 2D materials -- monolayer molybdenum disulfide -- optoelectronic synapses -- stretchable electronics; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202200238
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Stretchable devices can form intimate interfaces with the attached objects, giving birth to widespread applications in wearable electronics, bioelectronics, and artificial bionics. The emerging 2D materials are considered to be ideal candidates for stretchable electronics due to their ultra‐thin nature and excellent mechanical properties. However, stretchable 2D semiconductor devices previously demonstrated usually work at insufficient strain range with poor device performances mostly due to a mechanical failure. Here, the fabrication of buckled monolayer molybdenum disulfide (MoS2 ) field effect transistors (FETs) on elastomeric substrates is reported. These stretchable MoS2 FETs show stable performances with mobility of ≈30 cm 2 V −1 s −1, on/off ratio of ≈10 8, and subthreshold swing (SS) of ≈180 mV dec −1 after many cycled stretching‐release processes under more than 10% strain. In particular, the feasibility of applying these stretchable MoS2 transistors in optoelectronic synapse and neural network simulation in recognition tasks has been demonstrated. Abstract : Stretchable MoS2 field effect transistors are successfully fabricated by using pre‐stretching method. These buckled MoS2 devices have greater stretchability and excellent electrical performances under either uniaxial or biaxial strains. Moreover, the functionalities for optoelectronic synapses of the stretchable devices are demonstrated, which suggests a great potential for bioelectronics and neural network simulation.