Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022). (7th September 2022)

• Record Type: Journal Article
• Authors: Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 9(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-09-07
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202270047
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Stretchable Opto‐Synaptic Transistors In article number 2200238, Na Li, Guangyu Zhang, and co‐workers demonstrate highly stretchable monolayer MoS2 field effect transistors with buckled structures. These devices exhibit excellent electrical properties under a large uniaxial/biaxial stretching or oft‐repeated tensile force, and such stretchable devices could be well applied to mimic synapses for neuromorphic computation.