Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS2 Monolayer (Small Methods 6/2021). Issue 6 (10th June 2021)

• Record Type: Journal Article
• Authors: Wei, Zheng; Tang, Jian; Li, Xuanyi; Chi, Zhen; Wang, Yu; Wang, Qinqin; Han, Bo; Li, Na; Huang, Biying; Li, Jiawei; Yu, Hua; Yuan, Jiahao; Chen, Hailong; Sun, Jiatao; Chen, Lan; Wu, Kehui; Gao, Peng; He, Congli; Yang, Wei; Shi, Dongxia; Yang, Rong; Zhang, Guangyu
• Is Part Of: Small methods. Volume 5:Issue 6(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-06-10
• Subjects: band engineering -- field‐effect transistors -- molybdenum disulfide -- oxygen substitution -- wafer‐scale doping; Nanotechnology -- Methodology -- Periodicals; Nanotechnology -- Periodicals; Periodicals; 620.5028
• DOI: 10.1002/smtd.202170026
• Languages: English
• ISSNs: 2366-9608

Abstract

Abstract : In article number 2100091, Yang, Zhang, and co‐workers realize in situ substitutional oxygen doping of 2‐inch wafer‐scale monolayer MoS2 through chemical vapor deposition. The doped films (MoS2‐ x O x ) are uniform with tunable doping levels and their bandgaps decrease with the increased oxygen concentrations. Wafer‐scale monolayer MoS2‐ x O x films hold promise on the practical applications for high‐performance large‐scale 2D electronic devices.