31. Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor. (1st August 2022) Authors: Takizawa, Yuika; Hayashi, Masaya; Habuka, Hitoshi; Ishiguro, Akio; Ishii, Shigeaki; Watanabe, Toru; Moriyama, Yoshikazu; Daigo, Yoshiaki; Mizushima, Ichiro; Takahashi, Yoshinao Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
32. Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas. (1st January 2017) Authors: Okuyama, Shogo; Kurashima, Keisuke; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 9(2017) Page Start: P582 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
33. Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas. (8th August 2017) Authors: Okuyama, Shogo; Kurashima, Keisuke; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 9(2017) Page Start: P582 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
34. Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition of SiCxNyOz Film Using Monomethylsilane, Nitrogen and Argon. (1st January 2017) Authors: Minh, Mai Hong; Watanabe, Toru; Shioda, Kohei; Habuka, Hitoshi Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 7(2017) Page Start: P443 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
35. Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition of SiCxNyOz Film Using Monomethylsilane, Nitrogen and Argon. (6th June 2017) Authors: Minh, Mai Hong; Watanabe, Toru; Shioda, Kohei; Habuka, Hitoshi Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 7(2017) Page Start: P443 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
36. Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate. Issue 7 (5th June 2015) Authors: Matsui, Misako; Habuka, Hitoshi Journal: Physica status solidi Issue: Volume 212:Issue 7(2015:Jul.) Page Start: 1539 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
37. Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate. Issue 7 (5th June 2015) Authors: Matsui, Misako; Habuka, Hitoshi Journal: Physica status solidi Issue: Volume 212:Issue 7(2015:Jul.) Page Start: 1539 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
38. Parallel langmuir processes for silicon epitaxial growth in a SiHCl3-SiHx-H2 system. (December 2017) Authors: Watanabe, Toru; Yamada, Ayami; Saito, Ayumi; Sakurai, Ayumi; Habuka, Hitoshi Journal: Materials science in semiconductor processing Issue: Volume 72(2017) Page Start: 134 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
39. Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere. Issue 1591 (17th March 2014) Authors: Nakazawa, Haruo; Ogino, Masaaki; Teranishi, Hideaki; Takahashi, Yoshikazu; Habuka, Hitoshi Journal: MRS proceedings Issue: Issue 1591:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
40. Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor. (February 2020) Authors: Takahashi, Toshinori; Otani, Mana; Muroi, Mitsuko; Irikura, Kenta; Matsuo, Miya; Yamada, Ayami; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro Journal: Materials science in semiconductor processing Issue: Volume 106(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗