Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor. (1st August 2022)

• Record Type: Journal Article
• Authors: Takizawa, Yuika; Hayashi, Masaya; Habuka, Hitoshi; Ishiguro, Akio; Ishii, Shigeaki; Watanabe, Toru; Moriyama, Yoshikazu; Daigo, Yoshiaki; Mizushima, Ichiro; Takahashi, Yoshinao
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 8(2022)
• Publication Date: 2022-08-01
• Subjects: silicon carbide -- chemical vapor deposition -- chlorine trifluoride gas -- detach -- cleaning; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac889d
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A dilute chlorine trifluoride gas at less than 1% was possible for the cleaning of a silicon carbide chemical vapor deposition (CVD) reactor. For 20 min, the chlorine trifluoride gas at the concentrations of 0.5%–1% in ambient nitrogen at atmospheric pressure could detach the 30 μ m-thick particle-type polycrystalline silicon carbide CVD film from the susceptor which had a coating film made of a purified pyrolytic carbon (PPyC). While the PPyC film had some damage due to the shallow fluorine diffusion, it could be recovered without any pit formation by annealing in ambient nitrogen containing a trace amount of oxygen at atmospheric pressure for 10 min at the temperature of 845 °C.