Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition of SiCxNyOz Film Using Monomethylsilane, Nitrogen and Argon. (1st January 2017)

• Record Type: Journal Article
• Authors: Minh, Mai Hong; Watanabe, Toru; Shioda, Kohei; Habuka, Hitoshi
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 7(2017)
• Page Start: P443
• Page End: P448
• Publication Date: 2017-01-01
• Subjects: argon plasma -- monomethylsilane -- nitrogen -- plasma-enhanced chemical vapor deposition -- room temperature -- SiCxNyOz; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0291707jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Without any heating assistance, a gas mixture of monomethylsilane, nitrogen and argon was used at 10–20 Pa for 5 min for forming a SiC x N y Oz film under parallel plate plasma. By this process, a dense film thicker than 100 nm could be obtained. The film thickness could be expressed by an overall rate expression consisting of the gas partial pressures at the inlet. Based on the obtained equation, the dominant process for film formation was evaluated to be the result of the deposition and the etching. By calculation using a similar form, the film contents of silicon, carbon, nitrogen and oxygen could be reproduced. Thus, the film thickness and the contents were controllable by the technique developed in this study.