Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor. (February 2020)

• Record Type: Journal Article
• Authors: Takahashi, Toshinori; Otani, Mana; Muroi, Mitsuko; Irikura, Kenta; Matsuo, Miya; Yamada, Ayami; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro
• Is Part Of: Materials science in semiconductor processing. Volume 106(2020)
• Publication Date: 2020-02
• Subjects: Minimal fab -- Chemical vapor deposition reactor -- Quartz crystal microbalance -- Silicon epitaxial growth -- Trichlorosilane -- Dichlorosilane; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104759
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Chlorosilane gas transport in ambient hydrogen in a slim vertical cold wall chemical vapor deposition reactor was real-time monitored using a quartz crystal microbalance (QCM) using its behaviour responding to the properties of the gas mixture. The QCM frequency quickly decreased by introducing the trichlorosilane gas, while it slowly decreased by the dichlorosilane gas. The QCM frequency behavior was explained by the gas flow condition, such as the plug flow and recirculating flow, in the reactor. The relationship was consistent with the gas flow calculations, because the heavy and light gases could directly flow downward and recirculate, respectively, in the chamber due to natural convection. The information obtained from the QCM frequency behavior is expected to be utilized for the real-time gas monitoring and for the process design.