Parallel langmuir processes for silicon epitaxial growth in a SiHCl3-SiHx-H2 system. (December 2017)

• Record Type: Journal Article
• Authors: Watanabe, Toru; Yamada, Ayami; Saito, Ayumi; Sakurai, Ayumi; Habuka, Hitoshi
• Is Part Of: Materials science in semiconductor processing. Volume 72(2017)
• Page Start: 134
• Page End: 138
• Publication Date: 2017-12
• Subjects: Silicon epitaxial growth -- Parallel Langmuir processes -- Trichlorosilane -- Silicon hydrides; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.09.034
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Parallel surface reactions in a SiHCl3 -SiH x -H2 system were numerically evaluated based on the heat and gas flow in the epitaxial reactor for clarifying the increase in the silicon epitaxial growth rate. H2 and SiH x are assumed to individually react with the intermediate surface species, *SiCl2, which was formed by the chemisorption of SiHCl3 . The measurement was reproduced by the calculation using the rate constant obtained in this study for the surface reaction between *SiCl2 and SiH x . The decrease in the surface coverage by *SiCl2 and the increase in the silicon yield were shown to be caused by the SiH x . Thus, the surface reaction of the *SiCl2 with the SiH x was theoretically shown to be effective for increasing the growth rate to higher than the saturated value in an ordinary SiHCl3 -H2 system. The rate equation for the parallel Langmuir processes in a general form was also described.