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2. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices. Issue 7 (13th January 2020)

6. GaN microwave varactors with insulated electrodes. Issue 3 (20th March 2014)

8. High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V. Issue 6 (17th February 2021)

9. High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides. Issue 7 (7th February 2020)

10. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates. (8th December 2016)