High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V. Issue 6 (17th February 2021)

• Record Type: Journal Article
• Authors: Xue, Hao; Hussain, Kamal; Talesara, Vishank; Razzak, Towhidur; Gaevski, Mikhail; Mollah, Shahab; Rajan, Siddharth; Khan, Asif; Lu, Wu
• Is Part Of: Physica status solidi. Volume 15:Issue 6(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-02-17
• Subjects: aluminum gallium nitride -- enhancement mode -- field-effect transistors, high current density -- ultrawide bandgap; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202000576
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Enhancement‐mode ultrawide‐bandgap Al0.65 Ga0.35 N/Al0.4 Ga0.6 N metal–insulator–semiconductor heterojunction field‐effect transistors are demonstrated using fluorine‐plasma treatment for threshold voltage control and Al2 O3 as gate dielectric. The device exhibits a threshold voltage of 5 V, a maximum drain current density of 105 mA mm −1, and a transconductance of 19 mS mm −1 . In addition, the capability to achieve low off‐state current density at 3–4 × 10 −9 mA mm −1, an exceptionally low gate leakage current density of 1.4 × 10 −8 mA mm −1 even at a high forward gate bias of V GS = 12 V, and a current on/off ratio >10 10 is shown. Small signal measurement shows that the device has a unity current gain cutoff frequency f T of 3.8 GHz and power gain cutoff frequency f max of 4.5 GHz. Abstract : Enhancement‐mode ultrawide‐bandgap Al0.65 Ga0.35 N/Al0.4 Ga0.6 N metal–insulator–semiconductor heterojunction‐field‐effect‐transistors are demonstrated using fluorine‐plasma treatment and Al2 O3 as gate dielectric. The device exhibits a threshold voltage of 5 V and a maximum drain current density of 105 mA mm −1 . Small signal performance is reported for enhancement‐mode AlGaN channel transistors.