High-current recessed gate enhancement-mode ultrawide bandgap AlxGa1−xN channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V. (7th January 2021)

• Record Type: Journal Article
• Authors: Mollah, Shahab; Hussain, Kamal; Mamun, Abdullah; Gaevski, Mikhail; Simin, Grigory; Chandrashekhar, MVS; Khan, Asif
• Is Part Of: Applied physics express. Volume 14:Number 1(2021)
• Publication Date: 2021-01-07
• Subjects: UWBG AlGaN MOSHFET -- Enhancement mode -- Perforated channel -- High Current; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abd599
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report a recessed-gate enhancement-mode Al2 O3 -ZrO2 /Al0.6 Ga0.4 N/Al0.4 Ga0.6 N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 A mm −1 at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure with graded back barrier for strain management and to screen the growth interface from the channel. The device exhibited a threshold-voltage ( V TH ) of 2.75 ± 0.57 V with absolute maximum V TH = 3.6 V, a +12.2 V shift from that for a depletion-mode MOSHFET fabricated on the same wafer. A 3-terminal breakdown voltage of 700 V was measured in the off-state, showing the viability of E-mode UWBG AlGaN for power electronics.