GaN microwave varactors with insulated electrodes. Issue 3 (20th March 2014)

• Record Type: Journal Article
• Authors: Gaevski, Mikhail; Deng, Jianyu; Gaska, Remis; Shur, Michael; Simin, Grigory
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 853
• Page End: 856
• Publication Date: 2014-03-20
• Subjects: GaN -- HFET -- varactor -- microwave switch -- power limiter; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300667
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report on GaN microwave varactors with capacitively coupled isolated electrodes. Metal‐insulator‐semiconductor (MIS) varactors have 4–5 orders of magni‐tude lower leakage currents than similar devices with Schottky contacts. Low leakage capacitively coupled contacts enable microwave switches and power limiters with low loss, high RF power and excellent temperature stability up to at least 200 °C. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)