Current collapse in high-Al channel AlGaN HFETs. (5th June 2019)

• Record Type: Journal Article
• Authors: Mollah, Shahab; Gaevski, Mikhail; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Hu, Xuhong; Chandrashekhar, M V S; Simin, Grigory; Khan, Asif
• Is Part Of: Applied physics express. Volume 12:Number 7(2019)
• Publication Date: 2019-06-05
• Subjects: AlGaN HFET -- high Al composition -- current collapse -- Si3N4 passivation -- gated TLM; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab24b1
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report the first study of current collapse in ultra-wide bandgap high-Al AlGaN channel heterostructure field-effect transistors (HFETs) using short-pulse biasing. Our results show that, under applied pulsed gate and drain voltages, the current collapse results from increased resistance of the source- gate and gate-drain regions but not from the channel under the gate. We also show that passivation of access regions of the high-Al channel HFET with SiNx results in significant reduction in current collapse.