1. Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs. (June 2015) Authors: Koyama, M.; Cassé, M.; Barraud, S.; Ghibaudo, G.; Iwai, H.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 36 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures. (June 2022) Authors: Serra di Santa Maria, F.; Contamin, L.; Cassé, M.; Theodorou, C.; Balestra, F.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 192(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]. (January 2023) Authors: Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]. (January 2023) Authors: Catapano, E.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Drain current model for short-channel triple gate junctionless nanowire transistors. (August 2016) Authors: Paz, B.C.; Cassé, M.; Barraud, S.; Reimbold, G.; Faynot, O.; Ávila-Herrera, F.; Cerdeira, A.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Drain current model for short-channel triple gate junctionless nanowire transistors. (August 2016) Authors: Paz, B.C.; Cassé, M.; Barraud, S.; Reimbold, G.; Faynot, O.; Ávila-Herrera, F.; Cerdeira, A.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. (November 2015) Authors: Fenouillet-Beranger, C.; Previtali, B.; Batude, P.; Nemouchi, F.; Cassé, M.; Garros, X.; Tosti, L.; Rambal, N.; Lafond, D.; Dansas, H.; Pasini, L.; Brunet, L.; Deprat, F.; Grégoire, M.; Mellier, M.; Vinet, M. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 2 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. (December 2017) Authors: Paz, B.C.; Doria, R.T.; Cassé, M.; Barraud, S.; Reimbold, G.; Vinet, M.; Faynot, O.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 79(2017) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures. (December 2021) Authors: Serra di Santa Maria, F.; Contamin, L.; Cardoso Paz, B.; Cassé, M.; Theodorou, C.; Balestra, F.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures. (July 2022) Authors: Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 193(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗