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2. Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices. (17th April 2015)

8. Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects. (December 2017)

9. Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding. (19th June 2019)

10. Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding. (1st January 2019)