11. 200-V High-side thick-layer SOI field p-channel LDMOS with multiple field plates. (February 2016) Authors: Liang, Tao; Ding, Liwen; Chen, Gang; He, Yitao; Huang, Yong; Qiao, Ming; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 90(2016) Page Start: 141 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. 200-V High-side thick-layer SOI field p-channel LDMOS with multiple field plates. (February 2016) Authors: Liang, Tao; Ding, Liwen; Chen, Gang; He, Yitao; Huang, Yong; Qiao, Ming; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 90(2016) Page Start: 141 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. (December 2016) Authors: Ajayan, J.; Nirmal, D. Journal: Superlattices and microstructures Issue: Volume 100(2016) Page Start: 526 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. 20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications. (September 2017) Authors: Ajayan, J.; Subash, T.D.; Kurian, Dheena Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 183 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. 2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET. (September 2017) Authors: Kumar, Prashanth; Bhowmick, Brinda Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 805 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. 2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET. (June 2018) Authors: Saha, Priyanka; Banerjee, Pritha; Sarkar, Subir Kumar Journal: Superlattices and microstructures Issue: Volume 118(2018) Page Start: 16 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. 3-D analytical model of the high-voltage interconnection effect for SOI LDMOS. (December 2021) Authors: Du, Ling; Guo, Yu-Feng; Zhang, Jun; Yao, Jia-Fei; Liu, Jian-Hua; Huang, Chen-Yang; Li, Man Journal: Superlattices and microstructures Issue: Volume 160(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. 320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice. (November 2017) Authors: Sun, Yaoyao; Wang, Guowei; Han, Xi; Xiang, Wei; Jiang, Dongwei; Jiang, Zhi; Hao, Hongyue; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan Journal: Superlattices and microstructures Issue: Volume 111(2017) Page Start: 783 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. 3D analysis of applied field effect on trapped magnetic field during pulsed field magnetization of bulk superconductor. Issue 1 (18th April 2014) Authors: Khene, Mohamed Lotfi; Alloui, Lotfi; Mimoune, Souri Mohamed; Bouillault, Frédéric; Feliachi, Mouloud Journal: European physical journal Issue: Number 66:Issue 1(2014:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars. (August 2016) Authors: Yao, Jia-fei; Guo, Yu-feng; Xia, Tian; Zhang, Jun; Lin, Hong Journal: Superlattices and microstructures Issue: Volume 96(2016) Page Start: 95 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗