20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. (December 2016)

• Record Type: Journal Article
• Authors: Ajayan, J.; Nirmal, D.
• Is Part Of: Superlattices and microstructures. Volume 100(2016)
• Page Start: 526
• Page End: 534
• Publication Date: 2016-12
• Subjects: High electron mobility transistor (HEMT) -- Indium phosphide (InP) -- Short channel effects (SCE) -- Side recess spacing (LSIDE) -- Terahertz monolithic integrated circuit (TMIC); Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.10.011
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The DC and RF performance of Lg = 20 nm enhancement mode (E-Mode) In0.7 Ga0.3 As/InAs/In0.7 Ga0.3 As composite channel high electron mobility transistor (HEMT) on InP substrate with heavily doped In0.52 Ga0.48 As source/drain regions (S/D) is compared with the performance of conventional HEMT structure. The other features of the device include the use of T-gate, thin layer of platinum sink into the barrier layer, double δ-doping technology and multilayer cap. The Sentaurus TCAD simulations performed at room temperature using physics based drift-diffusion carrier transport model shows that Lg = 20 nm, W = 2 × 10 μm device with heavily doped In0.52 Ga0.48 As S/D regions exhibit a 14% improvement in transconductance (gm ) and 15% improvement in drain current compared to conventional HEMT structure. Also the proposed device shows 25% improvement in cut-off frequency (fT ) and 17% improvement in maximum oscillation frequency (fmax ) compared to conventional HEMT structure and this excellent performance is achieved mainly due to the reduction of parasitics such as S/D resistances and also due to the low gate length. Highlights: An E-Mode HEMT with heavily doped In0.52 Ga0.48 As S/D regions for future THz applications was proposed. Investigated the impact of strained composite channel, buried platinum technology and double δ-doping techniques. Investigated the factors influencing fT and fmax. Aggressive device scaling was done to improve the performance.