320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice. (November 2017)

• Record Type: Journal Article
• Authors: Sun, Yaoyao; Wang, Guowei; Han, Xi; Xiang, Wei; Jiang, Dongwei; Jiang, Zhi; Hao, Hongyue; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan
• Is Part Of: Superlattices and microstructures. Volume 111(2017)
• Page Start: 783
• Page End: 788
• Publication Date: 2017-11
• Subjects: Mid-infrared -- Focal plane arrays -- InAs/GaSb superlattice -- HOT; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.07.037
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: 320 × 256 mid-infrared focal plane arrays, together with linear arrays and single element devices, were fabricated based on type-II InAs/GaSb superlattice. At 77 K, the diode shows 50% cut-off wavelength of 4.8 μm and peak quantum efficiency of 38% at 3.7 μm without any bias dependence. The dominant dark current mechanisms at different temperatures are identified by R0 A analysis. At 160 K, R0 A of 2.2 × 10 3 Ω cm 2 and specific detectivity of 1.8 × 10 11 cm Hz 0.5 /W are demonstrated. Infrared imaging with an integration time of 5 ms demonstrates noise equivalent temperature difference of 12.3 mK and 34.2 mK, separately at 90 K and 120 K. Highlights: 320 × 256 high operating temperature mid-infrared FPA was fabricated in passivation by anodic sulfide. The dominant dark current mechanisms are identified by R0 A analysis at temperatures ranging from 10 K to 300 K. The diode shows 50% cut-off wavelength of 4.8 μm and peak quantum efficiency of 38% at 3.7 μm. The NETDs present mean values of 12.3 mK and 34.2 mK, separately at 90 K and 120 K.