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- 1-D ballistic theory -- Carbon nanotube -- compact model -- modulated surface potential -- threshold voltage 2
- 1T1R -- Multi-level cell (MLC) -- resistive random access memory (RRAM) -- transparent amorphous oxide semiconductor (TAOS) 2
- 2 state current -- MOS -- ultra thin metal gate -- ultra thin oxide 2
- 3-D Packaging -- Anisotropy -- Bonded Si Wafer -- Gravitational Sag -- Pattern Overlay -- Process Induced Wafer Geometry Change -- Silicon -- Surface Profile Measurement -- Wafer Support 2
- 4H-SiC -- Ammonia -- Atomic layer deposition -- Interface trap density -- Surface roughness 2
- Al/Hf ratio -- HfxAlyOz -- Pd nanocrystal -- Retention characteristic -- Tunneling layer 2
- Aluminum -- Anodic Porous Alumina -- Anodizing -- Phosphonoacetic Acid -- Structural Coloration 2
- Band gap -- GaN -- PA-MBE -- Raman spectroscopy -- RTPL 2
- CH3COOH gas -- inductively coupled plasma reactive ion etching -- magnetic random access memory -- Magnetic tunnel junctions (MTJ) stacks etching 2
- CMOS infrared detectors -- CMOS microbolometers -- low-cost microbolometers -- uncooled infrared detector 2