A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs. (1st August 2015)

• Record Type: Journal Article
• Authors: Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En
• Is Part Of: ECS Solid State Letters. Volume 4:Number 10(2015)
• Page Start: Q47
• Page End: Q49
• Publication Date: 2015-08-01
• Subjects: Lateral Position -- Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) -- Multi-level -- Random Telegraph Signal (RTS)
• DOI: 10.1149/2.0041510ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : This paper introduces a method to determine the located region of trap position by the analysis of three-level random telegraph signal (RTS) in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect-transistors. For the cases of two traps, the average time at the 2 nd level (〈τ2 〉) is composed of average emission time of one trap and average capture time of the other. Comparison and analysis of 〈τ2 〉 curves varying with gate voltage in RTS measurements with and without interchanged source/drain can clarify the located regions of the two traps. Moreover, the simplified equations are also considered and used to confirm the trap positions.