4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding. (1st January 2015)

• Record Type: Journal Article
• Authors: Liang, Jianbo; Shimizu, Sae; Nishida, Shota; Shigekawa, Naoteru; Arai, Manabu
• Is Part Of: ECS Solid State Letters. Volume 4:Number 11(2015)
• Page Start: Q55
• Page End: Q57
• Publication Date: 2015-01-01
• Subjects: charge netral level model -- heterojunction bipolar transistor -- interface states -- SiC/Si heterojunction -- surface activated bonding
• DOI: 10.1149/2.0041511ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : 4H-SiC/Si heterojunction bipolar transistors with emitter-up (E-up) and collector-up (C-up) configurations were fabricated by surface activated bonding for the first time. Their electrical characteristics were measured at raised ambient temperatures. The common-base current gain α increased as the temperature was raised in the both E-up and C-up structures. In the E-up structure, α reached to ≈ 0.99 at 573 K. Improvements in both device structures and surface activated bonding conditions should provide further improvements in device performance.