2-State Current Characteristics of MOSCAP with Ultrathin Oxide and Metal Gate. (6th November 2015)
- Record Type:
- Journal Article
- Title:
- 2-State Current Characteristics of MOSCAP with Ultrathin Oxide and Metal Gate. (6th November 2015)
- Main Title:
- 2-State Current Characteristics of MOSCAP with Ultrathin Oxide and Metal Gate
- Authors:
- Tan, Yu-De
Hwu, Jenn-Gwo - Abstract:
- Abstract : By using the combination of thin metal gate and ultra-thin oxide, metal-oxide-semiconductor (MOSCAP) structure exhibits distinct 2-state characteristic in reading currents. The gate electrode is long and thin so that it owns a larger gate resistance to enlarge the RC time response. The device exhibits a retention time constant of about 210 ms, and an endurance of at last one million cycles. However, the control sample does not exhibit the similar behavior. It is believed that the concept of using thin metal gate and ultra-thin oxide is applicable to scaled structure since they are controllable factors in design.
- Is Part Of:
- ECS Solid State Letters. Volume 4:Number 12(2015)
- Journal:
- ECS Solid State Letters
- Issue:
- Volume 4:Number 12(2015)
- Issue Display:
- Volume 4, Issue 12 (2015)
- Year:
- 2015
- Volume:
- 4
- Issue:
- 12
- Issue Sort Value:
- 2015-0004-0012-0000
- Page Start:
- N23
- Page End:
- N25
- Publication Date:
- 2015-11-06
- Subjects:
- 2 state current -- MOS -- ultra thin metal gate -- ultra thin oxide
- DOI:
- 10.1149/2.0111512ssl ↗
- Languages:
- English
- ISSNs:
- 2162-8750
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 20864.xml