Is Part Of: Solid-state electronics. Volume 110(2015) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Solid-state electronics. Volume 110(2015)

1. Absorption coefficients of GeSn extracted from PIN photodetector response. (August 2015)

Authors:: Ye, Kaiheng; Zhang, Wogong; Oehme, Michael; Schmid, Marc; Gollhofer, Martin; Kostecki, Konrad; Widmann, Daniel; Körner, Roman; Kasper, Erich; Schulze, Jörg
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 71
Record Type:: Journal Article
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2. Arsenic atomic layer doping in Si using AsH3. (August 2015)

Authors:: Yamamoto, Yuji; Kurps, Rainer; Murota, Junichi; Tillack, Bernd
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 29
Record Type:: Journal Article
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3. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys. (August 2015)

Authors:: Xu, Chi; Senaratne, Charutha L.; Kouvetakis, John; Menéndez, José
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 76
Record Type:: Journal Article
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4. Editorial Board. (August 2015)

Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: IFC
Record Type:: Journal Article
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5. Editorial Board. (August 2015)

Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: IFC
Record Type:: Journal Article
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6. Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−x−yGexSny layers on SiO2. (August 2015)

Authors:: Yamaha, Takashi; Kurosawa, Masashi; Ohmura, Takuma; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 54
Record Type:: Journal Article
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7. Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. (August 2015)

Authors:: Baert, B.; Gupta, S.; Gencarelli, F.; Loo, R.; Simoen, E.; Nguyen, N.D.
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 65
Record Type:: Journal Article
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8. Enhanced light emission from Ge by GeO2 micro hemispheres. (August 2015)

Authors:: Chen, Yen-Yu; Yen, C.-C.; Chang, T.-Y.; Liu, C.W.
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 83
Record Type:: Journal Article
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9. Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition. (August 2015)

Authors:: Deng, Yunsheng; Nakatsuka, Osamu; Suzuki, Akihiro; Sakashita, Mitsuo; Zaima, Shigeaki
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 44
Record Type:: Journal Article
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10. Epitaxial growth and crystalline properties of Ge1−x−ySixSny on Ge(0 0 1) substrates. (August 2015)

Authors:: Asano, Takanori; Terashima, Tatsuya; Yamaha, Takashi; Kurosawa, Masashi; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki
Journal:: Solid-state electronics
Issue:: Volume 110(2015)
Page Start:: 49
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗