Epitaxial growth and crystalline properties of Ge1−x−ySixSny on Ge(0 0 1) substrates. (August 2015)

• Record Type: Journal Article
• Authors: Asano, Takanori; Terashima, Tatsuya; Yamaha, Takashi; Kurosawa, Masashi; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki
• Is Part Of: Solid-state electronics. Volume 110(2015)
• Page Start: 49
• Page End: 53
• Publication Date: 2015-08
• Subjects: Germanium -- Tin -- Silicon -- Epitaxial growth -- Strain; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.01.006
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: We have investigated the influence of tensile and compressive strain on the crystalline structures of Ge1− x − y Si x Sn y epitaxial layers. The tensile strain in Ge1− x − y Si x Sn y induces a non-uniform crystallinity of (2 2 0) lattice planes and surface roughening despite the strain magnitude is as small as 0.20%. In contrast, the unstrained or compressive strained Ge1− x − y Si x Sn y layer exhibits a flat and uniform surface and high crystallinity. We found that the control of the sign of the strain is an important factor to obtain a high quality Ge1− x − y Si x Sn y layer. Furthermore, substitutional Sn atoms in Ge1− x − y Si x Sn y epitaxial layer with an Sn content of 10% are thermally stable for annealing at 500 °C.