Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−x−yGexSny layers on SiO2. (August 2015)

• Record Type: Journal Article
• Authors: Yamaha, Takashi; Kurosawa, Masashi; Ohmura, Takuma; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki
• Is Part Of: Solid-state electronics. Volume 110(2015)
• Page Start: 54
• Page End: 58
• Publication Date: 2015-08
• Subjects: Silicon -- Germanium -- Tin -- Solid phase crystallization -- Mobility; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.01.005
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: We examined the formation of polycrystalline-Si1− x − y Ge x Sn y layers on SiO2 by the solid phase crystallization method. We investigated the impact of Sn incorporation on the polycrystallization, crystallinity, and electrical property of Si1− x Ge x layers. We found that the polycrystallization time of Si1− x − y Ge x Sn y decreases with increasing in the Sn content in the annealing at 500 °C. No Sn precipitation is observed after the crystallization of Si1− x − y Ge x Sn y layer with an Sn content of 2%, while severe Sn precipitation is found in the sample with an Sn content of 10%. Moreover, larger grains of polycrystal can be obtained by the incorporation of 2%-Sn with comparison to that without Sn. The enlargement of polycrystalline grain of Si1− x − y Ge x Sn y improves in the hole mobility to 74 cm 2 /V s.