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You searched for: Is Part Of Applied physics express. Volume 10:Number 5(2017)

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1. An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD. (26th April 2017)

9. Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. (6th April 2017)

10. Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory. (6th April 2017)