Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells. (18th April 2017)

• Record Type: Journal Article
• Authors: Nakamura, Katsuto; Fukuno, Tomonori; Miyake, Hideto; Hiramatsu, Kazumasa; Yamada, Yoichi
• Is Part Of: Applied physics express. Volume 10:Number 5(2017)
• Publication Date: 2017-04-18
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.051003
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The effect of quantum confinement on biexcitons in Al0.60 Ga0.40 N/Al y Ga1− y N multiple quantum well (MQW) structures (0.60 < y ) was studied. The biexciton binding energy ( B M ) was evaluated by photoluminescence excitation spectroscopy as a function of well width ( L W ) and aluminum composition in the barrier layers ( y ). For MQWs with L W = 1.2 nm, B M increased from 112 to 162 meV as y increased from 0.70 to 0.74. In addition, for MQWs with L W = 1.5 nm, B M increased from 146 to 174 meV as y increased from 0.70 to 0.84. These increases resulted from higher quantum confinement of the biexcitons.