An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD. (26th April 2017)

• Record Type: Journal Article
• Authors: Ji, Shiyang; Kosugi, Ryoji; Kojima, Kazutoshi; Mochizuki, Kazuhiro; Saito, Shingo; Nagata, Akiyo; Matsukawa, Yasuko; Yonezawa, Yoshiyuki; Yoshida, Sadafumi; Okumura, Hajime
• Is Part Of: Applied physics express. Volume 10:Number 5(2017)
• Publication Date: 2017-04-26
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.055505
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Two kinds of defective growth in 4H-SiC trench filling were found to be associated with the compositional ratio of supplied gases. An input HCl/SiH4 ratio below 35 leads to overgrowth around the mesa, forming voids. Overetching on the mesa induces an etched mesa when HCl is supplied in excess, e.g., HCl/SiH4 > 65 (SiH4 = 30 sccm). Thus, an empirical window for nondefective growth is discerned. It also contains a high-filling-rate area around HCl/SiH4 ∼50, which proves well-proportioned etching and deposition reactions, and 25-µm-deep trenches (aspect ratio of ∼11) are successfully filled at a rate as high as 4.3 µm/h.