Search
Search Constraints
You searched for: Date 2018 Journal Solid-state electronics- 621.38152 177
- Semiconducteurs -- Périodiques 177
- Semiconductors -- Periodicals 177
- (SWCNT) Single walled carbon nanotube -- (BSIM) Berkeley short channel model -- (CMOS) Complementary metal oxide semiconductor -- (THz) Terahertz -- Hybrid circuit 1
- 1D poisson -- 2D potential -- Analytical modeling -- Gaussian doping profile -- Trap-assisted-tunneling (TAT) -- Hetero-structure -- Double-gate (DG) Tunnel-FET -- Nanowire Tunnel-FET 1
- 3D NAND flash memory -- Characterization -- Leakage -- Top select transistor -- Program disturb 1
- 3D stacked NAND flash memory -- Channel stacked NAND flash memory -- Layer selection by multi-level operation (LSM) 1
- 4H-SiC power MOSFET -- Trench gate -- P-shielding -- Electric field defending -- Optimized design -- Trade-off -- Modeling 1
- Ab-initio -- Band gap narrowing -- III–V semiconductors -- 1D Poisson-Schrödinger -- Schottky barrier height -- Density functional theory (DFT) 1
- Admittance spectroscopy -- Organic light-emitting diodes -- Electron injection layer -- Electrical doping -- Space-charge-limited current 1