A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters. (May 2018)

• Record Type: Journal Article
• Authors: Cristoloveanu, S.; Lee, K.H.; Parihar, M.S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J.-Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.; Wan, J.; Bawedin, M.
• Is Part Of: Solid-state electronics. Volume 143(2018)
• Page Start: 10
• Page End: 19
• Publication Date: 2018-05
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.11.012
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The band-modulation and sharp-switching mechanisms in Z2-FET device are reviewed. It offers high current margin, long retention, low operating voltage and high speed. The main parameters are discussed based on detailed experiments and simulations. Abstract: The band-modulation and sharp-switching mechanisms in Z 2 -FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z 2 -FET is suitable for embedded memory applications.