A new approach to the extraction of single exponential diode model parameters. (June 2018)

• Record Type: Journal Article
• Authors: Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.
• Is Part Of: Solid-state electronics. Volume 144(2018)
• Page Start: 33
• Page End: 38
• Publication Date: 2018-06
• Subjects: Diode model -- Single-exponential -- Parasitic series resistance -- Function D -- Function G; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.02.013
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: An integration method is presented for parameter extraction of a diode with series resistance. The extraction allows to isolate the effects of each of the model parameters. A differentiation method is also presented for data with low level of experimental noise. Measured and simulated data verify the applicability of both proposed methods. Abstract: A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the integration of the data which allow to isolate the effects of each of the model parameters. A differentiation method is also presented for data with low level of experimental noise. Measured and simulated data are used to verify the applicability of both proposed method. Physical insight about the validity of the model is also obtained by using the proposed graphical determinations of the parameters.