A new high-κ Al2O3 based metal-insulator-metal antifuse. (June 2018)

• Record Type: Journal Article
• Authors: Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang
• Is Part Of: Solid-state electronics. Volume 144(2018)
• Page Start: 13
• Page End: 16
• Publication Date: 2018-06
• Subjects: Antifuse -- ALD Al2O3 -- Low on-state resistance -- Current overshoot; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.02.009
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A new metal-insulator-metal antifuse is fabricated with high-κ Al2 O3 deposited by atomic layer deposition (ALD) as the dielectric film. The on-state resistance of the new antifuse is found decreasing along with the increase of dielectric film thickness. Current overshoot is the main reason to explain the special dependence of the on-state resistance on the Al2 O3 film thickness. Abstract: In this paper, a new metal–insulator-metal (MIM) antifuse was fabricated with the high κ Al2 O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.