1. A Large-Scale Test Method for Mechanical Response of Pavement Structure. (11th February 2018) Authors: Zhou, Xingye; Wang, Xudong Other Names: Vaziri Ashkan Academic Editor. Journal: Advances in materials science and engineering Issue: Volume 2018(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A local fitting method to improve model calculation accuracy of flow point of asphalt mixture. (25th January 2021) Authors: Zhang, Chao; Tan, Yiqiu; Cyriaque, Assogba Ogoubi; Han, Meizhao; Zhou, Xingye; Meng, Anxin Journal: Construction & building materials Issue: Volume 268(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Coeffect of trapping behaviors on the performance of GaN-based devices *Project supported by the National Natural Science Foundation of China (Nos. 61604137, 61674130). (September 2018) Authors: Zhou, Xingye; Tan, Xin; Wang, Yuangang; Song, Xubo; Xu, Peng; Gu, Guodong; Lü, Yuanjie; Feng, Zhihong Journal: Journal of semiconductors Issue: Volume 39:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. Issue 3 (22nd December 2019) Authors: Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Wang, Yuangang; Song, Xubo; Zhou, Xuanze; Xu, Guangwei; Liang, Shixiong; Feng, Zhihong; Cai, Shujun; Fu, Xingchang; Pu, Aimin; Liu, Ming Journal: Physica status solidi Issue: Volume 14:Issue 3(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Evaluation of the Physical and Adhesive Properties of Natural Weathering Asphalt. (2nd January 2021) Authors: Wang, Yanzhu; Wang, Xudong; Zhou, Xingye; Yang, Guang; Zhang, Lei Other Names: Guo Meng Academic Editor. Journal: Advances in materials science and engineering Issue: Volume 2021(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High‐uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode. Issue 17 (1st August 2020) Authors: Zhou, Xingye; Tan, Xin; Lv, Yuanjie; Li, Jia; Liang, Shixiong; Feng, Zhihong; Cai, Shujun Journal: Electronics letters Issue: Volume 56:Issue 17(2020) Page Start: 895 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs. (May 2018) Authors: Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong Journal: Superlattices and microstructures Issue: Volume 117(2018) Page Start: 132 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection. Issue 23 (1st November 2015) Authors: Zhou, Qi; Liu, Li; Zhou, Xingye; Zhang, Anbang; Shi, Yuanyuan; Wang, Zeheng; Wang, Yuan Gang; Fang, Yulong; Lv, Yuanjie; Feng, Zhihong; Zhang, Bo Journal: Electronics letters Issue: Volume 51:Issue 23(2015) Page Start: 1889 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2. (9th October 2019) Authors: Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Liang, Shixiong; Song, Xubo; Zhou, Xuanze; Dong, Hang; Wang, Yuangang; Feng, Zhihong; Cai, Shujun Journal: Semiconductor science and technology Issue: Volume 34:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Numerical analysis of high‐voltage RESURF AlGaN/GaN high‐electron‐mobility transistor with graded doping buffer and slant back electrode. (23rd October 2019) Authors: Zhu, Chao; Zhou, Xingye; Feng, Zhihong; Wei, Zhiheng; Zhao, Ziyu; Zhao, Ziqi Journal: Micro & nano letters Issue: Volume 14:Number 12(2019) Page Start: 1282 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗