Numerical analysis of high‐voltage RESURF AlGaN/GaN high‐electron‐mobility transistor with graded doping buffer and slant back electrode. (23rd October 2019)

• Record Type: Journal Article
• Authors: Zhu, Chao; Zhou, Xingye; Feng, Zhihong; Wei, Zhiheng; Zhao, Ziyu; Zhao, Ziqi
• Is Part Of: Micro & nano letters. Volume 14:Number 12(2019)
• Page Start: 1282
• Page End: 1286
• Publication Date: 2019-10-23
• Subjects: aluminium compounds -- two‐dimensional electron gas -- III‐V semiconductors -- semiconductor device breakdown -- wide band gap semiconductors -- gallium compounds -- space charge -- high electron mobility transistors -- semiconductor device models -- semiconductor doping; graded doping buffer -- GDB -- AlGaN‐GaN -- voltage 1701.0 V -- voltage 2150.0 V -- frequency 13.84 GHz -- frequency 8.24 GHz -- frequency 14.8 GHz -- frequency 8.76 GHz -- 2DEG -- high‐voltage RESURF AlGaN‐GaN high‐electron‐mobility transistor -- reduced surface field AlGaN‐GaN high‐electron‐mobility transistor -- slant back electrode -- p‐dopant density -- ON‐state resistance -- gate‐drain spacing -- back electrode RESURF HEMT -- conventional BE‐RESURF HEMT -- peak electric field -- electric field distribution -- low p‐dopant density -- breakdown voltage -- electric field lines -- concentrated negative space charges -- SBE; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2018.5421
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : A reduced surface field (RESURF) AlGaN/GaN high‐electron‐mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p‐dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower‐left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF‐state, which flats the electric field and enhances the breakdown voltage ( V br ). Additionally, the low p‐dopant density near the top of GDB achieves the device with low ON‐state resistance ( R ON ). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE‐RESURF HEMT) with the same gate ‐drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE‐RESURF HEMT (8.24 and 13.84 GHz).